SSPD100 Silicon APD probe module

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SSPD100 Silicon APD probe module

Overview Specifications Ordering Resources

The photon counting module SSPD100 is an ultra-sensitive photoelectric detector based on Si-APD working at 400-1060nm. The detector can be operated linear mode and Geiger mode as well. The gain is more than 60 dB in Geiger mode. SSPD100 The active quenching circuit can realize continuous single-photon counting detection, and detection gates of any width and period can be applied to this detector in this active
quenching operation.

This quenching circuit achieves avalanche suppression of greater than 20 dB, which optimize the performance of the SSPD100.The peak detection efficiency could reach more than 55% around the 850 nm, and dark count is as low as 100cps with a deadtime of less than 50ns.

The SSPD100 standard model has an effective detection area of up to 100 um, and the single-photon counting signal is converted into a digital TTL signal inside the module and sent out via the SMA port.

The highly integrated, modular design facilitates OEM applications and industrial integration.

Application

◼ Fluorescence measurements

◼ LIDAR sywtem

◼ Quantum communication

◼ Quantum optics

◼ Spectral measurements

Key Features

High detection efficiency

100 um Photosensitive area

LVTTL Digital signal output

Low dark count

Low after pulse

Low time jitter

Usage Guidelines

1. Incorrect voltage may damage the module; ensure the power supply is correct.
2. APDs are highly sensitive photodetectors. During avalanche conditions, the input light signal intensity must be controlled. Excessive light intensity can damage the APD, reducing its sensitivity and, in severe cases, even causing diode breakdown.
3. In special application scenarios, the module’s operating temperature must not exceed 50°C. Excessive temperatures may cause the APD’s operating temperature to rise, leading to increased dark count levels.
4. The SSPD100’s default dead time is 50ns. This dead time setting affects the module’s maximum count rate. When the dead time is set to 50ns, the standard count rate is 10×10″ cps. If your application requires a specific dead time setting, please contact us at the time of ordering.
5. Similarly, the output signal pulse width also affects the maximum count rate. The typical pulse width is 30ns. 6. If your application requires a specific output signal, please contact us at the time of ordering. The SSPD100 supports both spatial and fiber optic interfaces.

Specifications

Parameter	Minimum	Typical	Maxmum	Unit
Supply Voltagel		12		V
Supply current		0.5		A
Spectral response range	400		1100	nm
Probing efficiency @700nm @850nm @1060nm		45 55 4		%
Dark count			100	cps
Dead time		50		ns
After-pulse Probability			5	%
Counting rate*1		10	15	Mcps
Senstive area		100		μm
Refrigeration Temp		-20		℃
Operating Temp.	-15		50	℃
Output signal Standard		LVTTL
Output signal width	5	30		ns
Gate pulse input level Enable =LVTTL low Disable =LVTTLhigh	02		0.4 3.3	V
Gate pulse frequency			10000	kHz
Power consumption		5	8	W

Main Machine

Module No.	Item	Description
SSPD100	Silicon APD probe module	Response wavelength: 400-1100 nm; Detection efficiency: 55% @ 850 nm; Dark counts: <100 cps; Dead time: 50 ns; Input method: Free space/fiber (optional); Saturation counts: >10 Mcps; Output signal level standard: LVTTL.